unisonic technologies co., ltd uf730 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2010 unisonic technologies co., ltd. qw-r502-077.e 5.5 amps, 400 volts n-channel power mosfet ? description the n-channel enhancement mode silicon gate power mosfet is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ? features * r ds(on) = 1 ? @v gs = 10 v * avalanche energy specified * rugged - soa is power dissipation limited * fast switching capability * linear transfer characteristics * high input impedance ? symbol to-220 1 1 to-220f to-252 to-251 1 1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing uf730l-ta3-t uf730g-ta3-t to-220 g d s tube uf730l-tf3-t uf730g-tf3-t to-220f g d s tube uf730l-tm3-t uf730g-tm3-t to-251 g d s tube UF730L-TN3-R uf730g-tn3-r to-252 g d s tape reel uf730l-tn3-t uf730g-tn3-t to-252 g d s tube
uf730 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-077.e ? absolute maximum ratings ( t c = 25 c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 400 v drain-gate voltage (r gs = 20k ? ) (t j =25 c ~125 c) v dgr 400 v gate-source voltage v gss 20 v continuous drain current i d 5.5 a pulsed drain current (note 1) i dm 22 a single pulse avalanche energy (note 2) e as 300 mj to-220 73 to-220f 38 power dissipation to-251 / to-252 p d 48 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functiona l device operation is not implied. ? thermal data parameter symbol ratings unit to-220 62.5 to-220f 62.5 junction-to-ambient to-251 / to-252 ja 110 c/w to-220 1.71 to-220f 3.31 junction-to-case to-251 / to-252 jc 2.6 c/w ? electrical characteristics (t c =25 c, unless otherwise specified.) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 400 v on-state drain current (note 3) i d(on) v ds > i d(on) x r ds(on)max , v gs = 10v 5.5 a drain-source leakage current i dss v ds = rated bv dss , v gs = 0v 25 a gate-source leakage current i gss v gs = 20v 100 na on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds(on) i d = 3.0a, v gs = 10v 0.8 1.0 ? dynamic characteristics input capacitance c iss 600 pf output capacitance c oss 150 pf reverse transfer capacitance c rss v ds = 25v, v gs = 0v, f = 1mhz 40 pf switching characteristics turn-on delay time t d(on) 10 17 ns turn-on rise time t r 20 29 ns turn-off delay time t d(off) 35 56 ns turn-off fall time t f v dd = 200v, i d 5.5a, r gs = 12 ? , r l = 35 ? (note 3, 4) 15 24 ns total gate charge q g 20 35 nc gate-source charge q gs 3.0 nc gate-drain charge q gd v gs = 10v, i d = 5.5a, v ds = 0.8 x rated bv dss i g(ref) = 1.5ma 10 nc
uf730 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-077.e ? electrical characteristics(cont.) parameter symbol test conditions min typ max unit drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs = 0v, i sd = 5.5a, 1.6 v maximum continuous drain-source diode forward current i s 5.5 a maximum pulsed drain-source diode forward current i sm 22 a reverse recovery time t rr 140 300 660 ns reverse recovery charge q rr i sd = 5.5a, di sd /dt = 100a/ s (note 3) 0.93 2.1 4.3 c notes: 1. repetitive rati ng : pulse width limited by t j 2. l = 20mh, i as = 5.5a, v dd = 50v, r g = 25 ? , starting t j = 25c 3. pulse test: pulse width 300 s, duty cycle 2% 4. essentially independent of operating temperature
uf730 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-077.e ? test circuits and waveforms
uf730 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-077.e ? typical characteristics drain current, i d (a) drain current, i d (a) drain current, i d (a) drain to source voltage, v ds (v) 80 120 200 output characteristics 0 160 40 0 2 4 6 8 v gs =10 v v gs =6.0v pulse duration=80 s duty cycle = 0.5% max v gs =5.5v v gs =5.0v v gs =4.5v v gs =4.0v 10 drain current, i d (a) drain to source voltage, v ds (v) 80 120 200 sturation characteristics 0 160 40 0 2 4 6 8 pulse duration=80 s duty cycle = 0.5% max v gs =5.5v v gs =5.0v v gs =4.5v v gs =4.0v 10 v gs =6.0v v gs =10v drain current, i dr (a) drain to source on resistance, r ds (dn) ( )
uf730 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-077.e ? typical characteristics source to drain current, i sd (a) gate to source voltage, v gs (v) capacitance, c (pf) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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